DatasheetsPDF.com

MPTE-36C

Littelfuse
Part Number MPTE-36C
Manufacturer Littelfuse
Description Silicon Avalanche Diodes
Published May 24, 2016
Detailed Description Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500...
Datasheet PDF File MPTE-36C PDF File

MPTE-36C
MPTE-36C


Overview
Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and linear functions.
This series offers the lowest clamping voltages.
FEATURES • Stand-off voltage range 5 to 45 Volts • Uni-directional and Bi-directional • Glass passivated junction • Very low clamping voltages • 100% surge tested MAXIMUM RATING • Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs) @25°C (see diagram on page 3 for wave form) • 5 watt steady state • Response time: 1 x 10-12 seconds (theoretical) • Forward surge rating 200 Amps, 8.
3ms half sine wave, (uni- directional devices only) • Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS • Case: DO-201AD: Molded plastic over glass passivated junction • Terminals: Axial leads, solderable per MIL-STD-202 Method 208 • Solderable leads = 230°C for 10 seconds (1.
59mm from case) • Marking: cathode band, (positive terminal, uni-directional devices only), device code, logo • Weight: 1.
5 grammes (approx) Agency Approvals: Recognized under the Components Program of Underwriters Laboratories.
Agency File Number: E128662 ORDERING INFORMATION ICTE or MPTE C Voltage Bi-Directional Packaging Option B = Bulk (500 pcs) T = Tape and reeled (1500 pcs) www.
littelfuse.
com Max 1.
066 Min 25.
4 4.
826 5.
207 9.
146 9.
527 Min 25.
4 All dimensions in mm ® 6 307 SILICON DIODE ARRAYS Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series ® 100,000 10,000 Measured at Zero Bias 100 Cj (pf) Measured at Stand-Off Voltage (VR) 1000 TJ=2 5°C f=1.
0 MHz Vsig=50mVp-p 10 Pp (kw) 1.
0 100 1 2 5 10 20 50 100 200 Pulse width (tp) V(BR) - Breakdown Voltage - Volts 0.
1 1µs 1.
0µs 10µs 100µs Pulse Width (tp) 1.
0ms 10ms Figure 1 - Typical Junction Capacitance Figure 2 - Peak Pulse Power R...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)