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PZT2907A

WEITRON
Part Number PZT2907A
Manufacturer WEITRON
Description PNP Silicon Planar Epitaxial Transistor
Published May 25, 2016
Detailed Description PZT2907A PNP Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-...
Datasheet PDF File PZT2907A PDF File

PZT2907A
PZT2907A

Overview
PZT2907A PNP Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature BASE 1 Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg COLLECTOR 2, 4 3 EM ITTER SOT-223 1.
BASE 2.
COLLECTOR 3.
EMITTER 4.
COLLECTOR 1 2 3 4 Value -60 -60 -5.
0 -600 1.
5 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C Device Marking PZT2907A=2907A ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0) Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.
0Vdc) Collector-Emitter Cutoff Current (VCE= -30 Vdc, VBE=-0.
5 Vdc) Emitter-Base Cutoff Current (VEB= 3.
0Vdc, IC =0) Symbol Min Max Unit V(BR)CEO -60 - Vdc V(BR)CBO -60 - Vdc V(BR)EBO -5.
0 - Vdc IBEX - 20 nAdc ICEX - -50 nAdc IEBO - 100 nAdc NOTE: 1.
Device mounted on an epoxy printed circuit board 1.
575 inches 1.
575 inches 0.
059 inches; mounting pad for the collector lead min.
0.
93 inches.
2 WEITRON http://www.
weitron.
com.
tw 1/4 Rev.
A 26-Aug-05 PZT2907A ELECTRICALCHARACTERISTICS-Continued (T A = 25 C unless otherwise noted) C harac teris tic S ymbol Min TY P Max Unit ON CHARACTERISTICS DC Current Gain (I C = -100 mAdc, VCE = -10 Vdc) (I C = -1.
0 mAdc, VCE = -10 Vdc) (I C = -10 mAdc, VCE = -10 Vdc) (I C = -150 mAdc, VCE = -10 Vdc) (I C = -500 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltages (I C = -150 mAdc, IB= -15 mAdc) (I C = -500 mAdc, IB= -50 mAdc) Base-Emitter Saturation Voltages (I C = -150 mAdc, IB = -15 mAdc) (I C = -500 mAdc, IB = -50 mAdc) - h FE1 75 - - h FE2 100 - - h FE3 100 - - h FE4 100 180 300 h FE5 50 - - V CE(sat) - Vdc -0.
2 -0.
4 -0.
5 -1.
6 V BE( sat) - - Vdc -1.
3 - -2.
6 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product...


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