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IS49NLC36160A

Integrated Silicon Solution
Part Number IS49NLC36160A
Manufacturer Integrated Silicon Solution
Description Common I/O RLDRAM 2 Memory
Published May 27, 2016
Detailed Description IS49NLC96400A, IS49NLC18320A, IS49NLC36160A 576Mb (64Mbx9, 32Mbx18, 18Mbx36) Common I/O RLDRAM 2 Memory ADVANCED INFOR...
Datasheet PDF File IS49NLC36160A PDF File

IS49NLC36160A
IS49NLC36160A

Overview
IS49NLC96400A, IS49NLC18320A, IS49NLC36160A 576Mb (64Mbx9, 32Mbx18, 18Mbx36) Common I/O RLDRAM 2 Memory ADVANCED INFORMATION SEPTEMBER 2014 FEATURES  533MHz DDR operation (1.
067 Gb/s/pin data rate)  38.
4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)  8 internal banks  Non-multiplexed addresses (address multiplexing option available)  SRAM-type interface  Programmable READ latency (RL), row cycle time, and burst sequence length  Balanced READ and WRITE latencies in order to optimize data bus utilization  Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK.
OPTIONS  Package:  144-ball FBGA (leaded)  144-ball FBGA (lead-free)  Configuration:  64Mx9  32Mx18  16Mx36  Clock Cycle Timing: Speed Grade -18 tRC 15 tCK 1.
875 -25E 15 2.
5  Differential input clocks (CK, CK#)  Differential ...


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