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IS49NLS18160

Integrated Silicon Solution
Part Number IS49NLS18160
Manufacturer Integrated Silicon Solution
Description Separate I/O RLDRAM 2 Memory
Published May 27, 2016
Detailed Description IS49NLS93200,IS49NLS18160 288Mb (x9, x18) Separate I/O RLDRAM® 2 Memory FEATURES ADVANCED INFORMATION SEPTEMBER 2012 ...
Datasheet PDF File IS49NLS18160 PDF File

IS49NLS18160
IS49NLS18160

Overview
IS49NLS93200,IS49NLS18160 288Mb (x9, x18) Separate I/O RLDRAM® 2 Memory FEATURES ADVANCED INFORMATION SEPTEMBER 2012 • 533MHz DDR operation (1.
067 Gb/s/pin data rate) • 38.
4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency) • Reduced cycle time (15ns at 533MHz) • 32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms) • 8 internal banks • Non-multiplexed addresses (address multiplexing option available) • SRAM-type interface • Programmable READ latency (RL), row cycle time, and burst sequence length • Balanced READ and WRITE latencies in order to optimize data bus utilization • Data mask signals (DM) to mask signal of WRITE data; DM ...


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