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AP4533GEM-HF

Part Number	AP4533GEM-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	May 28, 2016
Detailed Description	Advanced Power Electronics Corp. AP4533GEM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Sim...
Datasheet	AP4533GEM-HF PDF File

Overview

Advanced Power Electronics Corp.
AP4533GEM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 Description G2 S2 G1 S1 N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 30V 18mΩ 8.
4A -30V 36mΩ -6A AP4533 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G1 D1 G2 S1 D2 S2 Absolute Maximum Ratings@ Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 -30 +20 +20 8.
4 -6.
0 6.
7 -4.
8 30 -30 2.
0 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 201501073 AP4533GEM-HF N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=8A VGS=4.
5V, ID=6A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=8A Drain-Source Leakage Current VDS=24V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge VG...

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AP4533GEM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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