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AP4604P

Advanced Power Electronics
Part Number AP4604P
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 28, 2016
Detailed Description Advanced Power Electronics Corp. AP4604P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive R...
Datasheet PDF File AP4604P PDF File

AP4604P
AP4604P

Overview
Advanced Power Electronics Corp.
AP4604P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications.
The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON) ID3 40V 3.
7mΩ 140A G D S TO-220(P) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC.
(unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current (Chip) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 40 V +20 V 140 A 80 A 80 A 400 A PD@TC=25℃ PD@TA=25℃ TSTG Total Power Dissipation Total Power Dissipation Storage Temperature Range 150 2.
4 -55 to 175 W W ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 1 62 Units ℃/W ℃/W 1 201412181 AP4604P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Cap...


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