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AP4920GM-HF

Advanced Power Electronics
Part Number AP4920GM-HF
Manufacturer Advanced Power Electronics
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 28, 2016
Detailed Description Advanced Power Electronics Corp. AP4920GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simpl...
Datasheet PDF File AP4920GM-HF PDF File

AP4920GM-HF
AP4920GM-HF

Overview
Advanced Power Electronics Corp.
AP4920GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 25V 25mΩ 7A Description AP4920 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1 D1 G2 S1 D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +20 7 5.
7 20 2 0.
016 V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 201501093 AP4920GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=7A VGS=4.
5V, ID=5.
2A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=7A Drain-Source Leakage Current VDS=25V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=20V, VGS=0V Gate-Source...


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