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UPF18060

UltraRF
Part Number UPF18060
Manufacturer UltraRF
Description Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
Published May 28, 2016
Detailed Description ™ UPF18060 60W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station ap...
Datasheet PDF File UPF18060 PDF File

UPF18060
UPF18060

Overview
™ UPF18060 60W, 1.
88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1805 to 1880 GHz.
Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.
• ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity Application Specific Performance, 1.
88 GHz GSM: 60 Watts EDGE: 25 Watts IS95 CDMA: 7.
5 Watts W-CDMA: 5 Watts 13 dB 12.
5 dB 12.
5 dB 12.
5 dB Package Type 440117 6 • Typical EDGE Performance (ETSI 300-910 GSM 05.
05 v.
5.
5.
1) Average Load Power – 20 W PAE – 30 % Power Gain – 12.
5 dB ACPR1 (30 kHz BW offset ± 400 kHz normalized to total power in a 30 kHz BW): -57 dBc ACPR2 (30 kHz BW offset ± 600 kHz normalized to total power in a 30 kHz BW): -66 dBc Package Type 440133 6-1 UPF18060 ™ Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol BVDSS BVGSS PD TSTG TJ Value 65 +15 to -0.
5 100 0.
8 -65 to +150 200 Unit Volts Volts Watts W/°C °C °C Thermal Characteristics Characteristics Symbol Maximum Unit Thermal Resistance, Junction to Case 6 ΘJC 1.
2 Electrical DC Characteristics (TC=25°C unless otherwise specified) °C/W Rating Symbol Min Typ Max Unit Drain to Source Voltage, gate connected to source (VGS=0, IDS=1mA) Drain to Source Leakage current (VDS=28V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, IDS=1mA) Gate Quiescent Voltage (VDS=26 V, IDS=540mA) Drain to Source On Voltage (VGS=10V, IDS=1A) Forward Transconductance (VDS=10V, ID=5A) BVDSS IDSS IGSS VTH VGS(on) VDS(on) Gm 65 - - Volts - - 2.
0 mA - - 2.
0 µA - 3.
5 - Volts ...


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