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SSF11NS60UF

SILIKRON
Part Number SSF11NS60UF
Manufacturer SILIKRON
Description N-Channel MOSFET
Published May 28, 2016
Detailed Description Main Product Characteristics: VDSS RDS(on) ID 600V 0.32Ω (typ.) 11A Features and Benefits: Feathers:  High dv/dt and...
Datasheet PDF File SSF11NS60UF PDF File

SSF11NS60UF
SSF11NS60UF


Overview
Main Product Characteristics: VDSS RDS(on) ID 600V 0.
32Ω (typ.
) 11A Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance TO-220F SSF11NS60UF Marking and pin Assignment Schematic diagram Description: The SSF11NS60UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.
This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=133mH Avalanche Current @ L=133mH Operating Junction and Storage Temperature Range Max.
11 7 44 31 0.
25 600 ± 30 250 1.
94 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.
,LTD.
2013.
05.
28 www.
silikron.
com Version : 1.
0 page 1 of 8 SSF11NS60UF Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ.
— — Max.
4.
0 80 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min.
600 — — 2 — — — — — — — — — — — — — — — Typ.
— 0.
32 0.
72 — 2.
1 — — — — 22 4.
3 8 11 6 29 6 804 34 3.
4 Max.
— 0.
36 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω...


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