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IXTN30N100L

IXYS
Part Number IXTN30N100L
Manufacturer IXYS
Description Power MOSFET
Published May 31, 2016
Detailed Description Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V...
Datasheet PDF File IXTN30N100L PDF File

IXTN30N100L
IXTN30N100L

Overview
Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.
45 Ω Symbol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Maximum Ratings IXTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T JM TC = 25°C TC = 25°C TC = 25°C T = 25°C C 30 30 70 70 30 30 80 80 2.
0 2.
0 800 800 -55 .
.
.
+150 150 -55 .
.
.
+150 AG A D S (TAB) A miniBLOC, SOT-227 B (IXTN) mJ E153432 S J DG W °C G °C S °C S D S 1.
6 mm (0.
063 in) ...


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