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MS10N80

Bruckewell
Part Number MS10N80
Manufacturer Bruckewell
Description N-Channel MOSFET
Published Jun 1, 2016
Detailed Description MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer wit...
Datasheet PDF File MS10N80 PDF File

MS10N80
MS10N80

Overview
MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 46nC (Typ.
) • Extended Safe Operating Area • Lower RDS(ON) : 1.
10 Ω (Typ.
) @VGS=10V • 100% Avalanche Tested • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS EAR IAR dv/dt Drain Current -Continuous (TC=25°C) Drain Current -Continuous (TC=100°C) Drain Current Pulsed Single Pulsed Avalanche Energy Repetitive Avalanc...


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