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MS13P21

Bruckewell
Part Number MS13P21
Manufacturer Bruckewell
Description P-Channel MOSFET
Published Jun 1, 2016
Detailed Description MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench...
Datasheet PDF File MS13P21 PDF File

MS13P21
MS13P21

Overview
MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SC70-3 saves board space • Fast switching speed • High performance trench technology • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13P21] © Bruckewell Technology Corporation Rev.
A -2014 MS13P21 P-Channel 20-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA=25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) TJ/TSTG Operating Junction and Storage Temperature Value -20 ±8 -1.
7 -1.
4 -2.
5 ±0.
28 0.
34 0.
22 -55 to +150 Unit V V A A A A W W °C THERMAL RESISTANCE RATINGS Symbol Parameter RTHJA Maximum Junction-to-Ambient C/Wa (t <= 5 sec) Maximum Junction-to-Ambient C/Wa (Steady-State) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature Maximum 375 430 Units °C/W Static Symbol VGS Parameter Gate Threshold Voltage Test Conditions VDS = VGS, ID =-250μA Min Typ.
Max.
Units -0.
4 V IGSS Gate-Body Leakage VDS = 0 V , VGS = ±8 V ±100 nA IDSS ID(on) Zero Gate Voltage Drain Current On-State Drain CurrentA VDS = -16 V , VGS = 0 V VDS = -16 V , VGS = 0 V , TJ= 55°C VDS = -5 V, VGs = -4.
5 V -5 -1 uA -10 A IDS(on) gfs Drain-Source On-ResistanceA For...


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