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CMPD1001S

Central Semiconductor Corp
Part Number CMPD1001S
Manufacturer Central Semiconductor Corp
Description HIGH CURRENT SWITCHING DIODE
Published Mar 23, 2005
Detailed Description CMPD1001 CMPD1001A CMPD1001S HIGH CURRENT SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SE...
Datasheet PDF File CMPD1001S PDF File

CMPD1001S
CMPD1001S

Overview
CMPD1001 CMPD1001A CMPD1001S HIGH CURRENT SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.
SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, COMMON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 MAXIMUM RATINGS (TA=25oC) SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg ΘJA UNITS V mA mA mA mA mA mW oC oC/W Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 90 250 600 600 6000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 µA VR=90V VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.
75 UNIT V nA µA V 130 SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV.
TO 3.
0mA, RL=100Ω MAX 0.
84 0.
90 1.
00 1.
25 35 50 UNIT V V V V pF ns All dimensions in inches (mm).
NO CONNECTION A C1 A2 C1 C2 C CMPD1001 A1, C2 CMPD1001S A1, A2 CMPD1001A R2 131 ...


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