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CMPT6427

Central Semiconductor Corp
Part Number CMPT6427
Manufacturer Central Semiconductor Corp
Description NPN SILICON DARLINGTON TRANSISTOR
Published Mar 23, 2005
Detailed Description CMPT6427 NPN SILICON DARLINGTON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMP...
Datasheet PDF File CMPT6427 PDF File

CMPT6427
CMPT6427

Overview
CMPT6427 NPN SILICON DARLINGTON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT6427 type is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.
Marking Code is C1V.
SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA 40 40 12 500 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICEO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE fT TEST CONDITIONS VCB=30V VCE=25V VBE=10V IC=100µA IC=10mA IE=10µA IC=50mA, IB=0.
5mA IC=500mA, IB=0.
5mA IC=500mA, IB=0.
5mA VCE=5.
0V, IC=50mA VCE=5.
0V, IC=10mA VCE=5.
0V, IC=100mA VCE=5.
0V, IC=500mA VCE=5.
0V, IC=10mA, f=100MHz MIN MAX 50 1.
0 50 UNITS nA µA nA V V V V V V V 40 40 12 1.
20 1.
50 2.
00 1.
75 100K 200K 140K 10K 20K 14K 130 MHz 188 SYMBOL Cob Cib NF TEST CONDITIONS VCB=10V, IE=0, f=1.
0MHz VBE=0.
5V, IC=0, f=1.
0MHz VCE=5.
0V, IC=1.
0mA, RS=100kΩ, f=1.
0kHz TO 15.
7kHz MIN MAX 7.
0 15 10 UNITS pF pF dB All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 189 ...


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