DatasheetsPDF.com

DPG30I300HA

IXYS
Part Number DPG30I300HA
Manufacturer IXYS
Description High Performance Fast Recovery Diode
Published Jun 8, 2016
Detailed Description HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG30I300HA 31 DPG3...
Datasheet PDF File DPG30I300HA PDF File

DPG30I300HA
DPG30I300HA


Overview
HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG30I300HA 31 DPG30I300HA VRRM I FAV t rr = = = 300 V 30 A 35 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125b DPG30I300HA Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max.
non-repetitive reverse blocking voltage max.
repetitive reverse blocking voltage reverse current, drain current VR = 300 V VR = 300 V forward voltage drop IF = 30 A IF = 60 A IF = 30 A IF = 60 A average forward current TC = 140°C rectangular d = 0.
5 VF0 rF R thJC R thCH Ptot I FSM CJ I RM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max.
forward surge current junction capacitance max.
reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 150 V f = 1 MHz t rr reverse recovery time IF = 30 A; VR = 200 V -diF/dt = 200 A/µs TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150°C TVJ = 175°C Ratings min.
typ.
max.
300 300 1 0.
1 1.
34 1.
63 1.
06 1.
39 30 Unit V V µA mA V V V V A TVJ = 175°...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)