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DSA30C200IB

IXYS
Part Number DSA30C200IB
Manufacturer IXYS
Description Schottky Diode
Published Jun 8, 2016
Detailed Description Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200IB 1...
Datasheet PDF File DSA30C200IB PDF File

DSA30C200IB
DSA30C200IB

Overview
Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200IB 1 23 DSA30C200IB VRRM I FAV VF preliminary = 200 V = 2x 15 A = 0.
78 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-262 (I2Pak) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b Schottky Symbol VRSM VRRM IR VF I FAV Definition Conditions max.
non-repetitive reverse blocking voltage max.
repetitive reverse blocking voltage reverse current, drain current VR = 200 V VR = 200 V forward voltage drop IF = 15 A IF = 30 A IF = 15 A IF = 30 A average forward current TC = 155°C rectangular d = 0.
5 VF0 rF R thJC R thCH Ptot I FSM CJ threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max.
forward surge current junction capacitance t = 10 ms; (50 Hz), sine; VR = 0 V VR = 48 V f = 1 MHz DSA30C200IB TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 175°C preliminary Ratings min.
typ.
max.
200 200 250 2.
5 0.
94 1.
10 0.
78 0.
95 15 Unit V V µA mA V V V V A TVJ = 175°C TC = TVJ = TVJ = 25°C 45°C 25°C 0.
50 47 0.
53 V 10.
8 mΩ 1.
75 K/W K/W 85 W 320 A pF IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b Package TO-262 (I2Pak) Symbol Definit...


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