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IS66WVE4M16BLL

Part Number	IS66WVE4M16BLL
Manufacturer	ISSI
Description	3.0V Core Async/Page PSRAM
Published	Jun 9, 2016
Detailed Description	IS66WVE4M16BLL 3.0V Core Async/Page PSRAM Overview The IS66WVE4M16BLL is an integrated memory device containing 64Mbit P...
Datasheet	IS66WVE4M16BLL PDF File

Overview

IS66WVE4M16BLL 3.
0V Core Async/Page PSRAM Overview The IS66WVE4M16BLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  VDD 2.
7V~3.
6V, VDDQ 2.
7V~3.
6V  Page mode read access  Interpag...

Similar Datasheet

IS66WVE4M16BLL 3.0V Core Async/Page PSRAM - ISSI

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