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IS67WVE51216ECLL

Part Number	IS67WVE51216ECLL
Manufacturer	ISSI
Description	8Mb Async/Page PSRAM
Published	Jun 9, 2016
Detailed Description	IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/...
Datasheet	IS67WVE51216ECLL PDF File

Overview

IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.
7V~1.
95V, VDDQ 1.
7V~1.
95V  BLL: VDD 2.
7V~3.
6V, VDDQ 2.
7V~3.
6V  CLL: VDD 1.
7V~1.
95V, VDDQ 2.
7V~3.
6V  Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read access : 25ns  Low Power Consumption  Asynchronous Operation < 30 mA...

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IS67WVE51216ECLL 8Mb Async/Page PSRAM - ISSI

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