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IS62WV12816EBLL

Part Number	IS62WV12816EBLL
Manufacturer	ISSI
Description	ULTRA LOW POWER CMOS STATIC RAM
Published	Jun 10, 2016
Detailed Description	IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DEC...
Datasheet	IS62WV12816EBLL PDF File

Overview

IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.
65V-2.
2V VDD (IS62/65WV12816EALL) – 2.
2V-3.
6V VDD (IS62/65WV12816EBLL)  Three state outputs  Industrial and Automotive temperature support  2CS Option Available  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
When is HIGH (deselected) or when CS2 is LOW (deselected) or when is LOW, CS2 is HIGH and both and are HIGH, the device assumes a standby mode at wh...

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IS62WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM - ISSI

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