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FK3303010L

Panasonic
Part Number FK3303010L
Manufacturer Panasonic
Description Silicon N-channel MOS FET
Published Jun 10, 2016
Detailed Description FK3303010L Silicon N-channel MOSFET For switching FK350301 in SSSMini3 type package FK3303010L Unit: mm  Features  L...
Datasheet PDF File FK3303010L PDF File

FK3303010L
FK3303010L

Overview
FK3303010L Silicon N-channel MOSFET For switching FK350301 in SSSMini3 type package FK3303010L Unit: mm  Features  Low drive voltage: 2.
5 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: X1  Packaging FK3303010L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source Voltage Gate-source Voltage Drain Current Drain Current(Pulsed) Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IDp PD Tch Tstg Rating 30 ±12 100 200 100 150 -55 to +150 Unit V V mA mA mW °C °C 1.
Gate 2.
Source 3.
Drain Panasonic JEITA Code SSSMini3-F2-B SC-105AA SOT-723 Internal Connection 3 3 1 1 2 2 Pin Name 1.
Gate 2.
Source 3.
Drain Publication date: October 2012 Ver.
EED 1 FK3303010L  Electrical Characteristics Ta = 25 °C ± 3 °C Parameter Symbol Conditions Min Typ Max Drain-source Breakdown Voltage VDSS ID = 1mA, VGS = 0 V 30 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1.
0 Gate-source Leakage Current IGSS VGS = ±10 V, VDS = 0 V ±10 Gate-source Threshold Voltage Vth ID = 1.
0 μA, VDS = 3.
0 V 0.
5 1.
0 1.
5 Drain-source On-state Resistance RDS(on)1 ID = 10 mA, VGS = 2.
5 V RDS(on)2 ID = 10 mA, VGS = 4.
0 V 36 23 Forward Transfer Admittance |Yfs| ID = 10 mA, VDS = 3.
0 V 20 55 Input Capacitance Ciss 12 Output Capacitance Coss VDS = 3 V, VGS = 0 V, f = 1 MHz 7 Reverse Transfer Capacitance Crss 3 Turn-on delay time *1 ton VDD = 3 V, VGS = 0 V to 3 V RL=300Ω 100 Turn-off delay time *1 toff VDD = 3 V, VGS = 3 V to 0 V RL=300Ω 100 Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 ton , toff measurement circuit Unit V μA μA V Ω mS pF pF pF ns ns Ver.
EED 2 *1 ton , toff measurement circuit Vin 3V 0V PW = 10 μs D.
C.
≤ 1 % Vin G FK3303010L VDD = 3 V ID = 10 mA RL = 300 Ω D Vout 50 Ω S VGS Vout 10 ...


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