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IRFD320

Vishay
Part Number IRFD320
Manufacturer Vishay
Description Power MOSFET
Published Jun 11, 2016
Detailed Description www.vishay.com IRFD320, SiHFD320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg...
Datasheet PDF File IRFD320 PDF File

IRFD320
IRFD320

Overview
www.
vishay.
com IRFD320, SiHFD320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.
3 11 Single 1.
8 D HVMDIP S G D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion RoHS COMPLIANT • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.
1" pin centers.
The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRFD320PbF SiHFD320-E3 IRFD320 SiHFD320 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c VGS at 10 V TA = 25 °C TA = 100 °C TA = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 21 mH, Rg = 25 Ω, IAS = 2.
0 A (see fig.
12).
c.
ISD ≤ 2.
0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
LIMIT 400 ± 20 0.
49 0.
31 3.
9 0.
0083 48 0.
49 0.
10 1.
0 4.
0 -55 to +150 300 UNIT V A W/°C mJ A mJ W V/ns °C S14-2355-Rev.
D, 08-Dec-14 1 Document Number: 9...


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