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UPA2739T1A

Renesas
Part Number UPA2739T1A
Manufacturer Renesas
Description P-CHANNEL POWER MOSFET
Published Jun 12, 2016
Detailed Description Data Sheet μPA2739T1A P-channel MOSFET –30 V, –85 A, 2.8 mΩ R07DS0885EJ0102 Rev.1.02 Nov 28, 2012 Description The μ P...
Datasheet PDF File UPA2739T1A PDF File

UPA2739T1A
UPA2739T1A

Overview
Data Sheet μPA2739T1A P-channel MOSFET –30 V, –85 A, 2.
8 mΩ R07DS0885EJ0102 Rev.
1.
02 Nov 28, 2012 Description The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.
Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 2.
8 mΩ MAX.
(VGS = −10 V, ID = −46 A) ⎯ RDS(on) = 5.
7 mΩ MAX.
(VGS = −4.
5 V, ID = −23 A) • 4.
5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free Ordering Information 8-pin HVSON(6051) Part No.
μ PA2739T1A-E2-AY∗1 LEAD PLATING PACKING Pure Sn Tape 3000 p/reel Note: ∗1.
Pb-free (This product does not contain Pb in external electrode.
) Package 8-pin HVSON(6051) 0.
1 g TYP.
Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 m20 m85 m180 1.
5 4.
6 83 150 −55 to +150 -40 160 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) Rth(ch-C) 83.
3 1.
5 °C/W °C/W Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2.
Mounted on a glass epoxy board of 25.
4 mm x 25.
4 mm x 0.
8 mmt ∗3.
Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH R07DS0885EJ0102 Rev.
1.
02 Nov 28, 2012 Page 1 of 6 μPA2739T1A Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Dr...


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