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TMP10N60G

TRinno
Part Number TMP10N60G
Manufacturer TRinno
Description Power MOSFET
Published Jun 12, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP10N60G PDF File

TMP10N60G
TMP10N60G

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax ID = 10A RDS(on) = 0.
75 W(max) @ VGS= 10 V D G S Device TMP10N60 / TMPF10N60 TMP10N60G / TMPF10N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP10N60 / TMPF10N60 TMP10N60G / TMPF10N60G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP10N60(G) TMPF10N60(G) 600 ±30 10 10* 6.
5 6.
5* 40 40* 758 10 19.
8 198 52 1.
58 0.
41 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP10N60(G) 0.
63 62.
5 May 2010 : Rev1 www.
trinnotech.
com TMPF10N60(G) 2.
4 62.
5 Unit ℃/W ℃/W 1/5 TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconduc...


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