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TMPF2N60ZG

TRinno
Part Number TMPF2N60ZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 12, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF2N60ZG PDF File

TMPF2N60ZG
TMPF2N60ZG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP2N60Z(G)/TMPF2N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 2A <4.
0W Device TMP2N60Z / TMPF2N60Z TMP2N60ZG / TMPF2N60ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP2N60Z / TMPF2N60Z TMP2N60ZG / TMPF2N60ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP2N60Z(G) TMPF2N60Z(G) 600 ±30 2 2* 1.
4 1.
4 * 8 8* 128 2 5.
2 52 17.
3 0.
416 0.
138 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP2N60Z(G) 2.
4 62.
5 May 2012 : Rev0 www.
trinnotech.
com TMPF2N60Z(G) 7.
2 62.
5 Unit ℃/W ℃/W 1/7 TMP2N60Z(G)/TMPF2N60Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 70 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -70 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250...


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