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TMPF11N50

TRinno
Part Number TMPF11N50
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 12, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF11N50 PDF File

TMPF11N50
TMPF11N50

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax ID = 11A RDS(ON) = 0.
67 W(max) @ VGS= 10 V D G Device TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS...


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