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MT3S106FS

Toshiba Semiconductor
Part Number MT3S106FS
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noi...
Datasheet PDF File MT3S106FS PDF File

MT3S106FS
MT3S106FS

Overview
MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=1.
2dB (@f=2GHz) • High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.
02 -0.
04 0.
6 ±0.
05 0.
35±0.
05 0.
15±0.
05 Unit:mm 1.
0±0.
05 0.
8±0.
05 1 3 0.
1±0.
05 2 0.
1±0.
05 0.
2±0.
05 0.
48 0.
1±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 13 6 1 80 20 100 150 −55~150 Unit V V V mA mA mW °C °C 1.
BASE 2.
EM IT TER 3.
COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.
0006 g 2-1E1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB(1.
0 cm2 x 1.
0 mm (t)) 1 2007-11-01 Microwave Characteristics (Ta = 25°C) MT3S106FS Characteristics Transition Frequency Insertion Gain Noise Figure Symbol Test Condition fT |S21e|2(1) |S21e|2(2) NF VCE=1V, IC=10mA VCE=1V, IC=10mA, f=2GHz VCE=3V, IC=20mA, f=2GHz VCE=1V, IC=10mA, f=2GHz Min Typ.
Max Unit 6.
5 8.
5 -8 8.
5 10 - 1.
2 - GHz - dB - dB 2 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector Cut-off Current Emitter Cut-off Current DC Current Gain ICBO IEBO hFE VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=5...


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