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MT3S108FS

Toshiba Semiconductor
Part Number MT3S108FS
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noi...
Datasheet PDF File MT3S108FS PDF File

MT3S108FS
MT3S108FS

Overview
MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.
9dB (@f=2GHz) • High Gain:|S21e|2=11.
5dB (@f=2GHz) Marking 3 43 2 1 +0.
02 -0.
04 0.
6 ±0.
05 0.
35±0.
05 0.
15±0.
05 Unit:mm 1.
0±0.
05 0.
8±0.
05 1 3 0.
1±0.
05 2 0.
1±0.
05 0.
2±0.
05 0.
48 0.
1±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 10 4.
5 1.
5 25 12.
5 100 150 −55~150 Unit V V V mA mA mW °C °C 1.
BASE 2.
EM IT TER 3.
COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.
0006 g 2-1E1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB(1.
0 cm2 x 1.
0 mm (t)) 1 2007-11-01 Microwave Characteristics (Ta = 25°C) MT3S108FS Characteristics Transition Frequency Insertion Gain Noise Figure Symbol Test Condition fT |S21e|2(1) |S21e|2(2) NF VCE=1V, IC=10mA VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=10mA, f=2GHz VCE=1V, IC=7mA, f=2GHz Min Typ.
Max Unit 10.
5 13 - GHz - 9 - dB 9.
5 11.
5 - dB - 0.
9 1.
5 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector Cut-off Current ICBO VCB=5V, IE=0 Emitter Cut-off Current IEBO VEB=1V, IC=0 DC Current G...


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