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MT3S113TU

Toshiba Semiconductor
Part Number MT3S113TU
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distorti...
Datasheet PDF File MT3S113TU PDF File

MT3S113TU
MT3S113TU

Overview
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF=1.
15dB(Typ.
) (@ f=1GHz) • High Gain:|S21e|2=12.
5dB(Typ.
) (@ f=1GHz) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 1 23 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 Marking 3 R7 1.
1.
ベBーasスe 2.
2.
エEミmiッtteタr 3.
3.
コCレollクecタtor 12 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight : 6.
6mg (typ.
) Characteristics Symbol Rating Unit Collector-emitter voltage VCES Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector-current IC Base-current IB Collector power dissipation PC(Note1) Junction temperature Tj Storage temperature range Tstg Note1:The device is mounted on a ceramic board 13 V 5.
3 V 0.
6 V 100 mA 10 mA 900 mW 150 °C −55 to 150 °C (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-01 Microwave Characteristics (Ta = 25°C) MT3S113TU Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) OIP3 VCE=5V,IC=50mA VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz Min Typ.
Max Unit 9 11.
2 ⎯ GHz ⎯ 18 ⎯ dB 10.
5 12.
5 ⎯ dB ⎯ 0.
88 ⎯ dB...


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