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TMAN12N80AZ

TRinno
Part Number TMAN12N80AZ
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 15, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  ...
Datasheet PDF File TMAN12N80AZ PDF File

TMAN12N80AZ
TMAN12N80AZ

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance BVDSS 800V TMAN12N80AZ N-channel MOSFET ID RDS(on) 12A < 0.
65W Device TMAN12N80AZ Package TO-3PN Marking TMAN12N80AZ Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA October 2012 : Rev0 www.
trinnotech.
com TMAN12N80AZ 800 ±30 12 10 48 313 12 41.
6 416 3.
3 4.
5 -55~150 300 TMAN12N80AZ 0.
3 62.
5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMAN12N80AZ Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 800 -- -- V Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- IDSS VDS = 640 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.
0 A VDS = 30 V, ID = 6.
0 A 3 -- 5 V -- 0.
53 0.
65 W -- 18 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crs...


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