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TMP8N80

TRinno
Part Number TMP8N80
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 15, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP8N80 PDF File

TMP8N80
TMP8N80

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP8N80(G)/TMPF8N80(G) BVDSS 800V N-channel MOSFET ID RDS(on) 8A < 1.
4W Device TMP8N80 / TMPF8N80 TMP8N80G / TMPF8N80G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP8N80 / TMPF8N80 TMP8N80G / TMPF8N80G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP8N80(G) TMPF8N80G) 800 ±30 8 8* 4.
9 4.
9 * 32 32 * 201 8 25 250 40.
3 2 0.
32 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA February 2013 : Rev 1.
0 www.
trinnotech.
com TMP8N80(G) 0.
5 62.
5 TMPF8N80(G) 3.
1 62.
5 Unit ℃/W ℃/W 1/7 TMP8N80(G)/TMPF8N80(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 800 -- -- V Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- IDSS VDS = 640 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2...


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