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TMPF4N80G

TRinno
Part Number TMPF4N80G
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 15, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF4N80G PDF File

TMPF4N80G
TMPF4N80G

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax ID = 4A RDS(ON) = 3.
0 W(max) @ VGS= 10 V D G Device TMP4N80 TMPF4N80G Package TO-220 TO-220F S Marking TMP4N80 Remark RoHS TMPF4N80G Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient January 2012 : Rev0 Symbol RqJC RqJA www.
trinnotech.
com TMP4N80(G) TMPF4N80(G) 800 ±30 4 4* 2.
5 2.
5 * 16 16* 76 4 12.
3 123 38.
6 0.
98 0.
31 4.
5 -55~150 300 TMP4N80(G) 1.
01 62.
5 TMPF4N80(G) 3.
23 62.
5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/7 TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 800 -- -- V Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- IDSS VDS = 640 V, TC = 125°C -- -- 10 µA -- 100 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V RDS(on) ...


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