DatasheetsPDF.com

TMU6N70

TRinno
Part Number TMU6N70
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 15, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMU6N70 PDF File

TMU6N70
TMU6N70

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.
65 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N70/TMU6N70 TMD6N70G/TMU6N70G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD6N70/TMU6N70 TMD6N70G/TMU6N70G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD6N70(G)/TMU6N70(G) 700 ±30 5 3.
14 20 188 5 12 120 0.
96 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA January 2012 : Rev 1 www.
trinnotech.
com TMD6N70(G)/TMU6N70(G) 1.
04 110 Unit ℃/W ℃/W 1/6 TMD6N70(G)/TMU6N70(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 700 -- -- V Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V -- IDSS VDS = 560 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.
5 A VDS =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)