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TMP6N65

TRinno
Part Number TMP6N65
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP6N65 PDF File

TMP6N65
TMP6N65


Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax ID = 5.
5A RDS(on) = 1.
6 W(max) @ VGS= 10 V D G S Device TMP6N65 / TMPF6N65 TMP6N65G / TMPF6N65G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP6N65 / TMPF6N65 TMP6N65G / TMPF6N65G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP6N65(G) TMPF6N65(G) 650 ±30 5.
5 5.
5 * 3.
46 3.
46 * 22 22* 196.
6 5.
5 12 120 39 0.
96 0.
31 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA June 2011 : Rev1 www.
trinnotech.
com TMP6N65(G) 1.
04 62.
5 TMPF6N65(G) 3.
2 62.
5 Unit ℃/W ℃/W 1/7 TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 -- -- V Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- IDSS VDS = 520 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note ...


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