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TMPF10N60AG

TRinno
Part Number TMPF10N60AG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF10N60AG PDF File

TMPF10N60AG
TMPF10N60AG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60A(G)/TMPF10N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 10A <0.
7W D G S Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP10N60A(G) TMPF10N60AG) 600 ±30 10 10 * 6.
48 6.
48 * 40 40 * 660 10 19.
8 198 52 1.
58 0.
41 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP10N60A(G) 0.
63 62.
5 October 2012 : Rev0 www.
trinnotech.
com TMPF10N60A(G) 2.
4 62.
5 Unit ℃/W ℃/W 1/7 TMP10N60A(G)/TMPF10N60A(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VG...


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