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MRF6522-10R1

Part Number	MRF6522-10R1
Manufacturer	Motorola
Description	RF Power Field Effect Transistor
Published	Jun 16, 2016
Detailed Description	ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6522–10/...
Datasheet	MRF6522-10R1 PDF File

Overview

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC.
2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6522–10/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range.
The MRF6522–10R1 has been specifically designed for use in Communications Network (GSM) base stations.
The package offers the advantage of SMD.
• Specified 26 Volts, 960 MHz, Class AB Characteristics Output Power = 10 Watts CW Power Gain = 15 dB Min @ 960 MHz, 10 Watts CW Drain Efficiency = 48% Min @ 960 MHz, 10 Watts CW D • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances • In Tape and Reel.
R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
G S MRF6522-10R1 960 MHz, 10 W, 26 V LATERAL N–CHANNEL RF POWER ...

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