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2SJ380

Inchange Semiconductor
Part Number 2SJ380
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET Transistor
Published Jun 16, 2016
Detailed Description isc P-Channel MOSFET Transistor DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leak...
Datasheet PDF File 2SJ380 PDF File

2SJ380
2SJ380


Overview
isc P-Channel MOSFET Transistor DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -12 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
57 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W 2SJ380 isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc P-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON)-1 Drain-Source On-stage Resistance VGS= -10V; ID= -6A RDS(ON)-2 Drain-Source On-stage Resistance VGS= -4V; ID= -6A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -100V,VGS= 0 VSD Diode Forward Voltage IF=-12A;VGS= 0 2SJ380 MIN MAX UNIT -100 V -0.
8 -2.
0 V 0.
21 Ω 0.
32 Ω ±10 uA -0.
1 mA -1.
7 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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