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TMPF5N50

TRinno
Part Number TMPF5N50
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMPF5N50 PDF File

TMPF5N50
TMPF5N50

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G VDSS = 550 V @Tjmax ID = 4.
5A RDS(ON) = 1.
65 W(max) @ VGS= 10 V D G Device TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP5N50(G) TMPF5N50(G) 500 ±30 4.
5 4.
5 * 2.
86 2.
86 * 18 18* 240 4.
5 9.
25 92.
5 32 0.
74 0.
25 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Symbol Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient RqJC RqJA August 2010 : Rev1 www.
trinnotech.
com TMP5N50(G) 1.
35 62.
5 TMPF5N50(G) 3.
9 62.
5 Unit ℃/W ℃/W 1/5 TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 500 -- -- V Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- IDSS VDS = 400 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance F...


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