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TMU5N50

TRinno
Part Number TMU5N50
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMU5N50 PDF File

TMU5N50
TMU5N50

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D-PAK TMD5N50/TMU5N50 TMD5N50G/TMU5N50G VDSS = 550 V @Tjmax ID = 4.
5A RDS(ON) = 1.
65 W(max) @ VGS= 10 V I-PAK D Device TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Package D-PAK/I-PAK D-PAK/I-PAK G S Marking TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD...


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