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TMD5N40ZG

TRinno
Part Number TMD5N40ZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  Halogen free package  JEDEC Qualificat...
Datasheet PDF File TMD5N40ZG PDF File

TMD5N40ZG
TMD5N40ZG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK Device TMD5N40ZG/TMU5N40ZG Package D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG VDSS = 440 V @Tjmax ID = 3.
4A RDS(on) = 1.
6 W(max) @ VGS= 10 V I-PAK D G S Marking TMD5N40ZG/TMU5N40ZG Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA August 2011 : Rev0 www.
trinnotech.
com TMD5N40ZG/TMU5N40ZG 400 ±30 3.
4* 2.
15* 13.
6* 165 3.
4 5.
0 50 0.
4 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMD5N40ZG/TMU5N40ZG 2.
5 110 Unit ℃/W ℃/W 1/6 TMD5N40ZG/TMU5N40ZG Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Gate-Source Leakage Current Reverse Gate-Source Leakage Current BVDSS IDSS IGSSF IGSSR VGS = 0 V, ID = 250 mA VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 mA VGS = 10 V, ID = 1.
7A VDS = 30 V, ID = 1.
7 A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.
0 MHz...


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