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TMT3N40ZG

TRinno
Part Number TMT3N40ZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description TMT3N40ZG Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen fre...
Datasheet PDF File TMT3N40ZG PDF File

TMT3N40ZG
TMT3N40ZG

Overview
TMT3N40ZG Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device TMT3N40ZG D Package SOT-223 VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.
4 W(max) @ VGS= 10 V S D G G Marking TMT3N40ZG D S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Ambient Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Symbol RqJA July 2011 : Rev0 www.
trinnotech.
com TMT3N40ZG 400 ±30 2.
0* 1.
2* 8* 46 2 0.
2 2 0.
24 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMT3N40ZG 62.
5 Unit ℃/W 1/4 TMT3N40ZG Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 mA 400 -- -- V Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- IDSS VDS = 320 V, TC = 125°C -- -- 1 mA -- 10 mA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 mA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 mA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 mA VGS = 10 V, ID = 1 A VDS = 30 V, ID = 1 A 2 -- 4 -- 2.
75 3.
4 -- 9 -- V W S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 210 --...


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