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TMP16N25Z

TRinno
Part Number TMP16N25Z
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 16, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP16N25Z PDF File

TMP16N25Z
TMP16N25Z

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N25Z(G)/TMPF16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.
24W Device TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP16N25Z(G) TMPF16N25Z(G) 250 ±30 16 16 * 8.
3 8.
3 * 64 64 * 368 16 9.
39 93.
9 30.
4 0.
75 0.
24 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP16N25Z(G) 1.
33 62.
5 June 2012 : Rev0 www.
trinnotech.
com TMPF16N25Z(G) 4.
1 62.
5 Unit ℃/W ℃/W 1/7 TMP16N25Z(G)/TMPF16N25Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 250 -- -- V Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- IDSS VDS = 200 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) V...


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