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TMD16N25ZG

TRinno
Part Number TMD16N25ZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 17, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMD16N25ZG PDF File

TMD16N25ZG
TMD16N25ZG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD16N25Z(G)/TMU16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.
24W I-PAK Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD16N2...


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