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TMD8N25ZG

TRinno
Part Number TMD8N25ZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 17, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMD8N25ZG PDF File

TMD8N25ZG
TMD8N25ZG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD8N25Z(G)/TMU8N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on)MAX 8A <0.
6W I-PAK Device TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD8N25Z(G)/TMU8N25Z(G) 250 ±30 8 3.
6 32 147 8 5.
2 52 0.
41 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA May 2012 : Rev0 www.
trinnotech.
com TMD8N25Z(G)/TMU8N25Z(G) 2.
4 110 Unit ℃/W ℃/W 1/6 TMD8N25Z(G)/TMU8N25Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 250 -- -- V Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- IDSS VDS = 200 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 3 -- 5 V RDS(on) VGS = 10 V, ID = 4 A -- 0.
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