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TMD18N20ZG

TRinno
Part Number TMD18N20ZG
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 17, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMD18N20ZG PDF File

TMD18N20ZG
TMD18N20ZG

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD18N20Z(G)/TMU18N20Z(G) BVDSS 200V N-channel MOSFET ID RDS(on) MAX 18A <0.
17W I-PAK Device TMD18N20Z / TMU18N20Z TMD18N20ZG / TMU18N20ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD18N20Z / TMU18N20Z TMD18N20ZG / TMU18N20ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD...


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