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TGH30N120FD

TRinno
Part Number TGH30N120FD
Manufacturer TRinno
Description Field Stop Trench IGBT
Published Jun 17, 2016
Detailed Description Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeff...
Datasheet PDF File TGH30N120FD PDF File

TGH30N120FD
TGH30N120FD

Overview
Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGH30N120FD Field Stop Trench IGBT GC E Device TGH30N120FD Package TO-247 Marking TGH30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF IFM PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Value 1200 ±20 60 30 90 30 90 329 132 -55 ~ 150 -55 ~ 150 300 Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.
38 2.
1 40 Oct.
2013 : Rev1.
1 www.
trinnotech.
com Remark RoHS Unit V V A A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGH30N120FD Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 1200V, VGE = 0V VCE = 0V, VGE = ± 20V ON Gate – Emitter Threshold Voltage VGE(TH) Collector – Emitter Saturation Voltage VCE(SAT) VGE = VCE, IC = 30mA VGE = 15V, IC = 30A, TC = 25 oC VGE = 15V, IC = 30A, TC = 125 oC DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (Note 2) CIES COES CRES VCE = 30V, VGE = 0V f = 1MHz Turn-On Delay Time Rise Time Turn-Of...


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