DatasheetsPDF.com

TGH40N120FD

TRinno
Part Number TGH40N120FD
Manufacturer TRinno
Description Field Stop Trench IGBT
Published Jun 17, 2016
Detailed Description TGH40N120FD Field Stop Trench IGBT Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conductio...
Datasheet PDF File TGH40N120FD PDF File

TGH40N120FD
TGH40N120FD

Overview
TGH40N120FD Field Stop Trench IGBT Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification Applications GC E Induction Heating, Soft switching application, UPS, Welder, Inverter Device TGH40N120FD Package TO-247 Marking TGH40N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF IFM PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Value 1200 ±20 80 40 160 40 160 480 192 -55 ~ 150 -55 ~ 150 300 Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.
26 0.
95 40 August 2015 : Rev0.
0 www.
trinnotech.
com Remark RoHS Unit V V A A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGH40N120FD Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 1200V, VGE = 0V VCE = 0V, VGE = ± 20V ON Gate – Emitter Threshold Voltage VGE(TH) Collector – Emitter Saturation Voltage VCE(SAT) VGE = VCE, IC = 40mA VGE = 15V, IC = 40A, TC = 25 oC VGE = 15V, IC = 40A, TC = 125 oC DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (Note 2) CIES COES CRES VCE = 30V, VGE = 0V f = 1MHz Turn-On ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)