DatasheetsPDF.com

TGAN40N110FD

TRinno
Part Number TGAN40N110FD
Manufacturer TRinno
Description Field Stop Trench IGBT
Published Jun 17, 2016
Detailed Description Features • 1100V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Datasheet PDF File TGAN40N110FD PDF File

TGAN40N110FD
TGAN40N110FD

Overview
Features • 1100V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification Applications Induction Heating, Soft switching application TGAN40N110FD Field Stop Trench IGBT E GC Device TGAN40N110FD Package TO-3PN Marking TGAN40N110FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES IC ICM IF PD TJ TSTG TL Value 1100 ±20 80 40 120 40 338 135 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.
37 1.
59 40 June 2015.
Rev 0.
0 www.
trinnotech.
com Remark RoHS Unit V V A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN40N110FD Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Zero Gate Voltage Collector Current Gate – Emitter Leakage Current ON Gate – Emitter Threshold Voltage ICES IGES VGE(TH) Collector – Emitter Saturation Voltage VCE(SAT) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge CIES C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)