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TGL60N100ND1

TRinno
Part Number TGL60N100ND1
Manufacturer TRinno
Description NPT trench IGBT
Published Jun 17, 2016
Detailed Description Features: • 1000V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient ...
Datasheet PDF File TGL60N100ND1 PDF File

TGL60N100ND1
TGL60N100ND1

Overview
Features: • 1000V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGL60N100ND1 NPT trench IGBT GC E Device TGL60N100ND1 Package TO-264 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Marking TGL60N100ND1 Symbol VCES VGES Ic ICM IF PD TJ TSTG TL Value 1000 ±20 60 42 120 15 463 185 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by max junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal...


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