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TGAN40N60F2DS

TRinno

Field Stop Trench IGBT

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperatu...


TRinno

TGAN40N60F2DS

File Download Download TGAN40N60F2DS Datasheet


Description
Features 600V Fast Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification Applications UPS, Welder, Inverter, Solar TGAN40N60F2DS Field Stop Trench IGBT E GC Device TGAN40N60F2DS Package TO-3PN Marking TGAN40N60F2DS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF PD TJ TSTG TL Value 600 ±20 80 40 120 20 236 94 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.53 1.12 40 December 2015. Rev 0.0 www.trinnotech.com Remark RoHS Unit V V A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN40N60F2DS Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage BVCES Zero Gate Voltage Collector Current Gate –...




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