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TGPF30N43P

TRinno
Part Number TGPF30N43P
Manufacturer TRinno
Description Field Stop Trench IGBT
Published Jun 17, 2016
Detailed Description TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeff...
Datasheet PDF File TGPF30N43P PDF File

TGPF30N43P
TGPF30N43P

Overview
TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, C GCE Ordering Part Number TGPF30N43P TGPF30N43P-R TGPF30N43P-L Package TO-220F TO-220F(R-Forming) TO-220F(L-Forming) Packaging type Tube Tube Tube Marking TGPF30N43P TGPF30N43P TGPF30N43P Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 430 ±30 60 30 300 20.
8 8.
3 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Remark RoHS RoHS RoHS Unit V V A A A W W ℃ ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC RθJA August 2012 : Rev0 www.
trinnotech.
com Value 6.
0 62.
5 Unit ℃/W ℃/W 1/6 TGPF30N43P Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 430V, VGE = 0V VCE = 0V, VGE = ±30V 430 -- -- V -- -- 100 µA -- -- ± 250 nA ON Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 3.
1 4.
5 Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 30A, TJ = 25 oC -- 1.
4 2.
0 VGE = 15V, IC = 30A, TJ = 125 oC -- 1.
52 -- V V V DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance CIES COES CRES VCE = 25V, VGE = 0V, f = 1MHz -- 845 -- 50 -...


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